Samsung has rolled out a new enterprise 800GB SSD (solid state drive)—the SZ985 Z-SSD—to offer storage for today’s artificial intelligence (AI), big data and Internet of Things (IoT) applications.
Using Samsung’s new Z-NAND Flash chip technology, a high performance storage controller and massive 1.5GB LPDDR4 DRAM cache, the new SZ985 Z-SSD claims 1.7X faster random read access at 750K IOPs, compared to the company’s fast PM963 NVMe SSD.
Samsung designed the Z-SSD, in competition with Intel and Micron’s 3D XPoint memory. The Z-SSD features the firm’s Z-NAND memory, which is a modified version of their 3D NAND flash memory technology.
The new SSD is a single port, four-lane Z-SSD, in contrast to the dual-port functionality of some new enterprise NVMe SSDs.
The SSD features Z-NAND chips that claim to provide 10 times higher cell read performance than 3-bit V-NAND chips.
The SSD also sports 1.5GB LPDDR4 DRAM and a high -performance controller.
Samsung notes the 800GB Z-SSD features 1.7 times faster random read performance at 750K IOPS, and five times less write latency – at 16 microseconds, compared to an NVMe SSD PM963, which is based on 3-bit V-NAND chips.
The Z-SSD also delivers a random write speed of up to170K IOPS.
Also noteworthy is that the 800GB Z-SSD guarantees up to 30 drive writes per day (DWPD) for five years, or a total of 42 petabytes. That translates into storing a total of about 8.4 million 5GB-equivalent full-HD movies during a five-year period.
The reliability of the new Z-SSD is further underscored by a mean time between failures (MTBF) of two million hours.
Samsung will introduce its new Z-SSD in 800GB and 240GB versions, as well as related technologies at ISSCC 2018 (International Solid-State Circuits Conference), which will be held February 11-15 in San Francisco.
