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HomeHeadlinesHYPERRAM 3.0 Provides Double The Bandwidth For IoT Applications

HYPERRAM 3.0 Provides Double The Bandwidth For IoT Applications

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Winbond Electronics Corporation, a producer of semiconductor memory solutions, and Infineon Technologies, a developer of semiconductor, microelectronics, and IoT solutions, have announced the addition of HYPERRAM 3.0 to their HYPERRAMTM product partnership.

The HYPERRAM product line offers low-power, space-constrained IoT applications that require an off-chip external RAM a small alternative to standard pseudo-SRAM. HYPERRAM 3.0 has a maximum frequency of 200MHz and a 1.8V operation voltage, which is the same as HYPERRAM 2.0 and OCTAL xSPI RAM, but it has a data-transfer rate of 800MBps, which is double the previous rate. The next iteration of HYPERRAM uses a 22-pin extended IO HyperBus interface.

New IoT devices perform more than only machine-to-machine communication; they also handle voice control and tinyML inferences, requiring greater memory. Wearables, instrument clusters in automotive applications, infotainment and telematics systems, industrial machine vision, HMI displays, and communication modules are all good candidates for the HYPERRAM family. HYPERRAM 3.0 is a new version that can operate with the same command/address signal and data bus structure as the previous generation, but with increased bandwidth and lower standby power. The first device in the HYPERRAM 3.0 family will be a 256Mb device in a KGD, WLCSP Package, which can be implemented at the component, module, or PCB level according on the final product type.

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“As a provider of memory solutions, Infineon provides a family of solutions that deliver high performance in smaller form factors for next-generation IoT applications,” states Ramesh Chettuvetty, Sr. Director of Marketing and Applications at Infineon Technologies. “HYPERRAM™ 3.0 is the third generation of the HYPERRAM™ family that supports throughput of up to 800MBps using a new 16-bit extended version of the HyperBus interface. The 256Mb HYPERRAM 3.0 devices are now sampling. Infineon Technologies is pleased to collaborate with Winbond to enable broader adoption of this new memory technology.”

“Low pin count, low power consumption and easy control are three key features of HYPERRAM that help it significantly improve the performance of IoT end devices,” says Winbond. “HYPERRAM significantly simplifies the PCB layout design, extends mobile devices’ battery life, and works with a smaller processer via a lower pin count while increasing throughput compared to low-power DRAM, SDRAM, and CRAM/PSRAM,” Winbond adds.

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